|
|
MOSFET N-Ch 650 Volt 5 Amp
- STB8NM60T4
- STMicroelectronics
-
1:
3,62 €
-
919En existencias
|
N.º Ref. Mouser
511-STB8NM60
|
STMicroelectronics
|
MOSFET N-Ch 650 Volt 5 Amp
|
|
919En existencias
|
|
|
3,62 €
|
|
|
1,43 €
|
|
|
1,43 €
|
|
Mín.: 1
Múlt.: 1
:
1.000
|
|
MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
|
|
|
MOSFET de SiC Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
- SCT040TO65G3
- STMicroelectronics
-
1:
8,22 €
-
37En existencias
-
Nuevo producto
|
N.º Ref. Mouser
511-SCT040TO65G3
Nuevo producto
|
STMicroelectronics
|
MOSFET de SiC Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
|
|
37En existencias
|
|
|
8,22 €
|
|
|
6,21 €
|
|
|
4,61 €
|
|
|
4,30 €
|
|
|
4,30 €
|
|
Mín.: 1
Múlt.: 1
:
1.800
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
|
|
|
MOSFET N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET
- STF80N1K1K6
- STMicroelectronics
-
1:
2,07 €
-
1.003En existencias
-
1.000Pedido
-
Nuevo producto
|
N.º Ref. Mouser
511-STF80N1K1K6
Nuevo producto
|
STMicroelectronics
|
MOSFET N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET
|
|
1.003En existencias
1.000Pedido
|
|
|
2,07 €
|
|
|
1,01 €
|
|
|
0,903 €
|
|
|
0,726 €
|
|
|
0,666 €
|
|
Mín.: 1
Múlt.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
|
|
|
MOSFET N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET
- STF80N600K6
- STMicroelectronics
-
1:
2,76 €
-
1.043En existencias
-
Nuevo producto
|
N.º Ref. Mouser
511-STF80N600K6
Nuevo producto
|
STMicroelectronics
|
MOSFET N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET
|
|
1.043En existencias
|
|
|
2,76 €
|
|
|
1,38 €
|
|
|
1,36 €
|
|
|
1,14 €
|
|
|
0,998 €
|
|
Mín.: 1
Múlt.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
|
|
|
IGBT Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
- STGHU30M65DF2AG
- STMicroelectronics
-
1:
3,81 €
-
540En existencias
-
600Pedido
-
Nuevo producto
|
N.º Ref. Mouser
511-STGHU30M65DF2AG
Nuevo producto
|
STMicroelectronics
|
IGBT Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
|
|
540En existencias
600Pedido
|
|
|
3,81 €
|
|
|
2,53 €
|
|
|
1,79 €
|
|
|
1,54 €
|
|
Mín.: 1
Múlt.: 1
:
600
|
|
IGBTs
|
Si
|
SMD/SMT
|
HU3PAK-7
|
|
|
|
|
IGBT Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
- STGWA30M65DF2AG
- STMicroelectronics
-
1:
3,60 €
-
766En existencias
-
Nuevo producto
|
N.º Ref. Mouser
511-STGWA30M65DF2AG
Nuevo producto
|
STMicroelectronics
|
IGBT Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
|
|
766En existencias
|
|
|
3,60 €
|
|
|
2,43 €
|
|
|
1,80 €
|
|
|
1,60 €
|
|
|
1,42 €
|
|
Mín.: 1
Múlt.: 1
|
|
IGBTs
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
MOSFET Automotive N-channel 40 V, 0.48 mOhm max., 672 A STripFET F8 Power MOSFET
- STK615N4F8AG
- STMicroelectronics
-
1:
4,15 €
-
496En existencias
-
Nuevo producto
|
N.º Ref. Mouser
511-STK615N4F8AG
Nuevo producto
|
STMicroelectronics
|
MOSFET Automotive N-channel 40 V, 0.48 mOhm max., 672 A STripFET F8 Power MOSFET
|
|
496En existencias
|
|
|
4,15 €
|
|
|
2,76 €
|
|
|
1,96 €
|
|
|
1,85 €
|
|
|
1,75 €
|
|
|
1,72 €
|
|
Mín.: 1
Múlt.: 1
:
2.000
|
|
MOSFETs
|
|
|
|
|
|
|
|
MOSFET N-channel logic level 60 V, 2.5 mOhm max., 160 A, STripFET F7 Power MOSFET
- STL160N6LF7
- STMicroelectronics
-
1:
1,81 €
-
910En existencias
-
Nuevo producto
|
N.º Ref. Mouser
511-STL160N6LF7
Nuevo producto
|
STMicroelectronics
|
MOSFET N-channel logic level 60 V, 2.5 mOhm max., 160 A, STripFET F7 Power MOSFET
|
|
910En existencias
|
|
|
1,81 €
|
|
|
1,15 €
|
|
|
0,781 €
|
|
|
0,621 €
|
|
|
0,579 €
|
|
|
0,55 €
|
|
Mín.: 1
Múlt.: 1
:
3.000
|
|
MOSFETs
|
|
|
|
|
|
|
|
Transistores bipolares - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
- 2N2222AUB1
- STMicroelectronics
-
1:
79,62 €
-
144En existencias
|
N.º Ref. Mouser
511-2N2222AUB1
|
STMicroelectronics
|
Transistores bipolares - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
|
|
144En existencias
|
|
|
79,62 €
|
|
|
74,78 €
|
|
|
67,42 €
|
|
Mín.: 1
Múlt.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
UB-4
|
NPN
|
|
|
|
Transistores bipolares - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
- 2N2907AUB1
- STMicroelectronics
-
1:
96,01 €
-
21En existencias
|
N.º Ref. Mouser
511-2N2907AUB1
|
STMicroelectronics
|
Transistores bipolares - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
|
|
21En existencias
|
|
Mín.: 1
Múlt.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
UB-4
|
PNP
|
|
|
|
Transistores bipolares - BJT Rad-Hard 80 V, 5 A NPN transistor - Engineering model
- 2N5154S1
- STMicroelectronics
-
1:
201,44 €
-
27En existencias
|
N.º Ref. Mouser
511-2N5154S1
|
STMicroelectronics
|
Transistores bipolares - BJT Rad-Hard 80 V, 5 A NPN transistor - Engineering model
|
|
27En existencias
|
|
Mín.: 1
Múlt.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
SMD.5
|
NPN
|
|
|
|
IGBT Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
- GWA40MS120DF4AG
- STMicroelectronics
-
1:
5,73 €
-
557En existencias
|
N.º Ref. Mouser
511-GWA40MS120DF4AG
|
STMicroelectronics
|
IGBT Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
|
|
557En existencias
|
|
|
5,73 €
|
|
|
2,85 €
|
|
|
2,84 €
|
|
|
2,82 €
|
|
|
2,70 €
|
|
Mín.: 1
Múlt.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
17,67 €
-
127En existencias
|
N.º Ref. Mouser
511-SCT012H90G3AG
|
STMicroelectronics
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
|
|
127En existencias
|
|
|
17,67 €
|
|
|
12,69 €
|
|
|
12,33 €
|
|
|
11,52 €
|
|
Mín.: 1
Múlt.: 1
:
1.000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
13,31 €
-
169En existencias
|
N.º Ref. Mouser
511-SCT018H65G3AG
|
STMicroelectronics
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
169En existencias
|
|
|
13,31 €
|
|
|
9,40 €
|
|
|
9,05 €
|
|
|
8,57 €
|
|
|
8,00 €
|
|
Mín.: 1
Múlt.: 1
:
1.000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
13,43 €
-
527En existencias
|
N.º Ref. Mouser
511-SCT018W65G3-4AG
|
STMicroelectronics
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
527En existencias
|
|
|
13,43 €
|
|
|
9,49 €
|
|
|
8,08 €
|
|
Mín.: 1
Múlt.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
- SCT020W120G3-4AG
- STMicroelectronics
-
1:
16,25 €
-
478En existencias
|
N.º Ref. Mouser
511-SCT020W120G3-4AG
|
STMicroelectronics
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package
|
|
478En existencias
|
|
Mín.: 1
Múlt.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
Hip247-4
|
N-Channel
|
|
|
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
17,44 €
-
590En existencias
|
N.º Ref. Mouser
511-SCT025W120G3-4AG
|
STMicroelectronics
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
590En existencias
|
|
|
17,44 €
|
|
|
11,12 €
|
|
|
10,09 €
|
|
|
9,57 €
|
|
Mín.: 1
Múlt.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
- SCT025W120G3AG
- STMicroelectronics
-
1:
15,54 €
-
462En existencias
|
N.º Ref. Mouser
511-SCT025W120G3AG
|
STMicroelectronics
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
|
|
462En existencias
|
|
|
15,54 €
|
|
|
11,37 €
|
|
|
9,98 €
|
|
|
9,51 €
|
|
Mín.: 1
Múlt.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-3
|
N-Channel
|
|
|
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
14,00 €
-
338En existencias
|
N.º Ref. Mouser
511-SCT027W65G3-4AG
|
STMicroelectronics
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
338En existencias
|
|
Mín.: 1
Múlt.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
-
1:
11,31 €
-
598En existencias
|
N.º Ref. Mouser
511-SCT040W120G3-4AG
|
STMicroelectronics
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
|
|
598En existencias
|
|
|
11,31 €
|
|
|
7,90 €
|
|
|
6,47 €
|
|
Mín.: 1
Múlt.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
11,22 €
-
587En existencias
|
N.º Ref. Mouser
511-SCT040W120G3AG
|
STMicroelectronics
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
587En existencias
|
|
|
11,22 €
|
|
|
7,84 €
|
|
|
6,41 €
|
|
Mín.: 1
Múlt.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-3
|
N-Channel
|
|
|
|
MOSFET de SiC Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4
- STMicroelectronics
-
1:
9,10 €
-
537En existencias
-
600Pedido
|
N.º Ref. Mouser
511-SCT040W65G3-4
|
STMicroelectronics
|
MOSFET de SiC Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
537En existencias
600Pedido
|
|
|
9,10 €
|
|
|
5,57 €
|
|
|
5,30 €
|
|
|
5,05 €
|
|
Mín.: 1
Múlt.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
|
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
- SCT040W65G3-4AG
- STMicroelectronics
-
1:
10,78 €
-
638En existencias
|
N.º Ref. Mouser
511-SCT040W65G3-4AG
|
STMicroelectronics
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package
|
|
638En existencias
|
|
|
10,78 €
|
|
|
7,87 €
|
|
|
6,39 €
|
|
|
6,38 €
|
|
|
6,08 €
|
|
Mín.: 1
Múlt.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
|
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4AG
- STMicroelectronics
-
1:
10,87 €
-
303En existencias
|
N.º Ref. Mouser
511-SCT070W120G3-4AG
|
STMicroelectronics
|
MOSFET de SiC Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
303En existencias
|
|
|
10,87 €
|
|
|
8,95 €
|
|
|
6,87 €
|
|
|
6,14 €
|
|
Mín.: 1
Múlt.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
MOSFET Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
- SH63N65DM6AG
- STMicroelectronics
-
1:
21,59 €
-
184En existencias
-
200Pedido
|
N.º Ref. Mouser
511-SH63N65DM6AG
|
STMicroelectronics
|
MOSFET Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
|
|
184En existencias
200Pedido
|
|
|
21,59 €
|
|
|
16,59 €
|
|
|
10,84 €
|
|
|
10,84 €
|
|
|
10,32 €
|
|
Mín.: 1
Múlt.: 1
:
200
|
|
MOSFETs
|
Si
|
SMD/SMT
|
ACEPACK SMIT-9
|
N-Channel
|
|