Vishay / Siliconix SQJ Automotive MOSFETs
Vishay / Siliconix SQJ Automotive MOSFETs are TrenchFET® Gen IV N-Channel 40VDS power MOSFETs. These AEC-Q101 qualified MOSFETs are 100% Rg and Unclamped Inductive Switching (UIS) tested with less-than 1 Qgd/Qgs ratio that optimizes the switching characteristics. The Vishay / Siliconix SQJ Automotive MOSFETs offer very low RDS(on) and operate within the -55°C to 175°C temperature range. These automotive-grade MOSFETs are available in a PowerPAK® SO-8L package with single/dual configurations. Typical applications include automotive, engine management, motor drives and actuators, and battery management.
Features
- TrenchFET® Gen IV power MOSFET
- AEC-Q101 qualified
- 100% Rg and UIS tested
- Qgd/Qgs ratio < 1 optimizes switching characteristics
- -55°C to 175°C operating junction and storage temperature range
- Available in a PowerPAK® SO-8L package with single/dual configurations
Applications
- Automotive
- Battery management
- Engine management
- Motor drives and actuators
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View Results ( 199 ) Page
| Número de referencia | Hoja de datos | Número de canales | Vds (Tensión separación drenador-fuente) | Id: corriente de drenaje continuo | Rds encendido (drenaje de la fuente en resistencia) | Qg (carga de compuertas) |
|---|---|---|---|---|---|---|
| SQJ128ELP-T1_GE3 |  |
1 Channel | 30 V | 437 A | 1.158 mOhms | 99 nC |
| SQJ116EP-T1_GE3 | |
1 Channel | 100 V | 37 A | 64 mOhms | 84 nC |
| SQJ185ELP-T1_GE3 | |
1 Channel | 80 V | 62 A | 19.5 mOhms | 46 nC |
| SQJ180EP-T1_GE3 | |
1 Channel | 80 V | 248 A | 3 mOhms | 78 nC |
| SQJ110EP-T1_GE3 | |
1 Channel | 100 V | 170 A | 6.3 mOhms | 75 nC |
| SQJ186EP-T1_GE3 | |
1 Channel | 80 V | 60 A | 15 mOhms | 24 nC |
| SQJ409EP-T2_GE3 | |
1 Channel | 40 V | 60 A | 7 mOhms | 170 nC |
| SQJ410EP-T1_GE3 | |
1 Channel | 30 V | 32 A | 3.5 mOhms | 110 nC |
| SQJ850EP-T2_GE3 | |
1 Channel | 60 V | 24 A | 23 mOhms | 20 nC |
| SQJ431EP-T1_GE3 | |
1 Channel | 200 V | 12 A | 213 mOhms | 71 nC |
Publicado: 2020-10-05
| Actualizado: 2024-12-13