Volver a ROHM Semiconductor

ROHM Semiconductor Ultra-Low IR Schottky Barrier Diodes

ROHM Semiconductor Ultra-Low IR Schottky Barrier Diodes are silicon epitaxial planar-structured diodes with 175°C. These diodes feature a 200V repetitive peak reverse voltage, ultra-low reverse current, 200V reverse voltage, and high reliability. The ultra-low IR Schottky barrier diodes are used in switching power supply, freewheel diodes, and reverse polarity protection applications.

Features

  • Silicon epitaxial planar structure
  • 200V repetitive peak reverse voltage (Duty≤0.5)
  • Ultra-low reverse current
  • 200V reverse voltage
  • High reliability
  • 175°C junction temperature

Applications

  • Switching power supply
  • Freewheel diodes
  • Reverse polarity protection

Normalized Transient Thermal Impedance from Junction to Case (Per Device)

Performance Graph - ROHM Semiconductor Ultra-Low IR Schottky Barrier Diodes
Publicado: 2025-06-16 | Actualizado: 2025-07-11