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ROHM Semiconductor R8019KNXC7G N-Ch 800V 19A Power MOSFETs

ROHM Semiconductor R8019KNXC7G N-Ch 800V 19A Power MOSFETs are low-on-resistance devices with fast switching. This power MOSFET features a 0.265Ω RDS(on)(Maximum), 83W power dissipation, and a -55°C to 150°C operating temperature range. The R8019KNXC7G Nch 800V 19A comes with Pb-free plating and is RoHS compliant. This power MOSFET has parallel use that is easy to use and is ideally used in switching applications.

Features

  • Low on-resistance
  • Fast switching
  • Parallel use is easy
  • Pb-free plating
  • RoHS compliant

Specifications

  • 800VDSS Drain-source voltage
  • ±19A Continuous drain current
  • 0.265Ω RDS(on)(Maximum)
  • 83W Power dissipation
  • -55°C to 150°C Operating temperature range

Dimension Diagram

Mechanical Drawing - ROHM Semiconductor R8019KNXC7G N-Ch 800V 19A Power MOSFETs
Publicado: 2023-11-07 | Actualizado: 2024-01-28