STMicroelectronics IGBT

Resultados: 203
Seleccionar Imagen Número de referencia Fabr. Descripción Hoja de datos Disponibilidad Precio (EUR) Filtre los resultados de la tabla por precio unitario basándose en su cantidad. Cant. RoHS Modelo ECAD Tecnología Empaquetado / Estuche Estilo de montaje Configuración Voltaje colector-emisor VCEO máx. Voltaje de saturación colector-emisor Voltaje puerta-emisor máximo Corriente continua del colector a 25 C Pd (disipación de potencia) Temperatura operativa mínima Temperatura operativa máxima Serie Cualificación Empaquetado
STMicroelectronics IGBT Trench gate field-stop 600 V, 30 A high speed HB series IGBT 714En existencias
Mín.: 1
Múlt.: 1

Si TO-3P Through Hole Single 600 V 1.55 V - 20 V, 20 V 60 A 260 W - 55 C + 175 C STGWT30H60DFB Tube
STMicroelectronics IGBT N-channel MOSFET 2.392En existencias
Mín.: 1
Múlt.: 1
Bobina: 1.000

Si D2PAK-3 SMD/SMT Single 600 V 2.2 V - 20 V, 20 V 20 A 65 W - 55 C + 150 C STGB10NC60KDT4 Reel, Cut Tape, MouseReel

STMicroelectronics IGBT Trench gate field-stop IGBT, M series 650 V, 4 A low loss 2.108En existencias
Mín.: 1
Múlt.: 1
Bobina: 2.500

Si DPAK-3 (TO-252-3) SMD/SMT Single 650 V 1.6 V - 20 V, 20 V 8 A 68 W - 55 C + 175 C STGD4M65DF2 Reel, Cut Tape, MouseReel
STMicroelectronics IGBT PowerMESH&#34 IGBT 2.001En existencias
1.000Pedido
Mín.: 1
Múlt.: 1

Si TO-220-3 Through Hole Single 600 V 2 V - 20 V, 20 V 11 A 28 W - 55 C + 150 C STGP14NC60KD Tube
STMicroelectronics IGBT Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long 550En existencias
Mín.: 1
Múlt.: 1

Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 72 A 230 W - 55 C + 175 C Tube
STMicroelectronics IGBT Trench gate field-stop IGBT M series, 650 V 30 A low loss 977En existencias
Mín.: 1
Múlt.: 1

Si Through Hole Single 650 V 1.55 V - 20 V, 20 V 60 A 258 W - 55 C + 175 C STGP30M65DF2 Tube


STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 15 A high speed 501En existencias
Mín.: 1
Múlt.: 1

Si Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 30 A 259 W - 55 C + 175 C STGWA15H120DF2 Tube
STMicroelectronics IGBT N Ch 55V 6.5mohm 80A Pwr MOSFET 2.384En existencias
Mín.: 1
Múlt.: 1
Bobina: 2.500

Si DPAK-3 (TO-252-3) SMD/SMT Single 600 V 2.2 V - 20 V, 20 V 15 A 62 W - 55 C + 150 C STGD8NC60KD Reel, Cut Tape, MouseReel
STMicroelectronics IGBT Trench gate H series 600V 10A HiSpd 1.861En existencias
Mín.: 1
Múlt.: 1

Si TO-220-3 Through Hole Single 600 V 1.5 V - 20 V, 20 V 20 A 115 W - 55 C + 175 C STGP10H60DF Tube
STMicroelectronics IGBT Trench gate field-stop 650 V, 15 A low-loss M series IGBT in a D2PAK package 1.417En existencias
Mín.: 1
Múlt.: 1
Bobina: 1.000

Si D2PAK-3 SMD/SMT Single 650 V 1.55 V - 20 V, 20 V 30 A 136 W - 55 C + 175 C STGB15M65DF2 Reel, Cut Tape, MouseReel
STMicroelectronics IGBT Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed 989En existencias
1.000Pedido
Mín.: 1
Múlt.: 1
Bobina: 1.000

Si D2PAK-3 SMD/SMT Single 600 V 1.7 V - 20 V, 20 V 60 A 260 W - 55 C + 175 C STGB30H60DLLFBAG AEC-Q101 Reel, Cut Tape, MouseReel
STMicroelectronics IGBT 600V 20A High Speed Trench Gate IGBT 1.086En existencias
Mín.: 1
Múlt.: 1

Si TO-220-3 Through Hole Single 600 V 2 V - 20 V, 20 V 40 A 167 W - 55 C + 175 C STGP20H60DF Tube
STMicroelectronics IGBT Trench gate field-stop 650 V, 40 A high-speed HB series IGBT 848En existencias
Mín.: 1
Múlt.: 1

Si TO-3P-3 Through Hole Single 650 V 1.6 V - 30 V, 30 V 80 A 283 W - 55 C + 175 C STGWT40HP65FB Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 600 V, 5 A high speed 2.258En existencias
Mín.: 1
Múlt.: 1

Si TO-220FP-3 Through Hole Single 600 V 1.5 V - 20 V, 20 V 10 A 24 W - 55 C + 175 C STGF5H60DF Tube


STMicroelectronics IGBT Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO247-4 pac 564En existencias
Mín.: 1
Múlt.: 1

Si Through Hole Single 650 V 1.55 V - 20 V, 20 V 86 A 272 W - 55 C + 175 C Tube
STMicroelectronics IGBT SLLIMM nano IPM, 5 A, 600 V, 3-phase inverter bridge IGBT 450En existencias
Mín.: 1
Múlt.: 1
Bobina: 400

Si NSDIP-26 SMD/SMT 600 V 1.79 V 5 A 9 W - 40 C + 150 C Reel, Cut Tape, MouseReel

STMicroelectronics IGBT Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT 540En existencias
600Pedido
Mín.: 1
Múlt.: 1
Bobina: 600

Si HU3PAK-7 SMD/SMT Single 650 V 1.6 V 20 V 87 A 441 W - 55 C + 175 C AEC-Q101 Reel, Cut Tape, MouseReel
STMicroelectronics IGBT Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT 766En existencias
Mín.: 1
Múlt.: 1

Si TO-247-3 Through Hole Single 650 V 2.02 V 20 V 87 A 441 W - 55 C + 175 C AEC-Q101 Tube


STMicroelectronics IGBT Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a 563En existencias
Mín.: 1
Múlt.: 1

Si TO-247-3 Through Hole Single 1.2 kV 1.95 V 20 V 80 A 536 W - 55 C + 175 C AEC-Q101 Tube
STMicroelectronics IGBT Automotive ACEPACK SMIT half-bridge 650 V, 80 A HB series IGBT with diode 189En existencias
Mín.: 1
Múlt.: 1
Bobina: 200

Si ACEPACK-5 SMD/SMT Dual 650 V 2.1 V 20 V 83 A 250 W - 55 C + 175 C AEC-Q100 Reel, Cut Tape, MouseReel
STMicroelectronics IGBT 30A 600V Fast IGBT 5kHz 1.9 VCE 492En existencias
Mín.: 1
Múlt.: 1

Si TO-3PF Through Hole Single 600 V 1.5 V - 20 V, 20 V 35 A 79 W - 55 C + 150 C STGWF30NC60S Tube
STMicroelectronics IGBT Trench gate field-stop 600 V, 4 A high speed H series IGBT 2.485En existencias
Mín.: 1
Múlt.: 1
Bobina: 2.500

Si DPAK-3 (TO-252-3) SMD/SMT Single 600 V 1.95 V 20 V 8 A 75 W - 55 C + 175 C Reel, Cut Tape, MouseReel
STMicroelectronics IGBT Automotive-grade trench gate field-stop, 650 V, 30 A, high-speed HB series IGBT 461En existencias
Mín.: 1
Múlt.: 1
Bobina: 1.000

Si H2PAK-2 SMD/SMT Single 650 V 1.55 V - 20 V, 20 V 60 A 260 W - 55 C + 175 C AEC-Q101 Reel, Cut Tape, MouseReel
STMicroelectronics IGBT Trench gate field-stop 1350 V, 25 A, soft-switching IH2 series IGBT 573En existencias
600Pedido
Mín.: 1
Múlt.: 1

Tube
STMicroelectronics IGBT Trench gate field-stop 1350 V, 35 A, soft-switching IH2 series IGBT 519En existencias
Mín.: 1
Múlt.: 1

Tube