STMicroelectronics IGBT

Resultados: 203
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Descripción Hoja de datos Disponibilidad Precio (EUR) Filtre los resultados de la tabla por precio unitario basándose en su cantidad.
Cant. RoHS Modelo ECAD Tecnología
Empaquetado / Estuche
Estilo de montaje
Configuración
Voltaje colector-emisor VCEO máx.
Voltaje de saturación colector-emisor
Voltaje puerta-emisor máximo
Corriente continua del colector a 25 C
Pd (disipación de potencia)
Temperatura operativa mínima
Temperatura operativa máxima
Serie
Cualificación
Empaquetado
STMicroelectronics IGBT Trench gate field-stop 650 V, 40 A high-speed HB series IGBT
Hoja de datos
No en almacén Plazo producción 14 Semanas
Mín.: 600
Múlt.: 600

Si TO-247-3 Through Hole - 20 V, 20 V 72 A 227 W - 55 C + 175 C STGWA40HP65FB2 Tube
STMicroelectronics IGBTs Trench gate field-stop 650 V, 40 A, soft-switching IH series IGBT in a TO-247 lo
Hoja de datos

Si TO-247-3 Through Hole Single 650 V 1.5 V - 20 V, 20 V 80 A 238 W - 55 C + 175 C STGWA40IH65DF Tube
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long
Hoja de datos

TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 115 A 375 W - 55 C + 175 C Tube
STMicroelectronics IGBT 650V 40A HSpd trench gate field-stop IGB
Hoja de datos
No en almacén Plazo producción 14 Semanas
Mín.: 1
Múlt.: 1

Si TO-3P Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 283 W - 55 C + 175 C STGWT40H65DFB Tube
STMicroelectronics IGBTs Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-220 packag
Hoja de datos

Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
Hoja de datos
No en almacén Plazo producción 15 Semanas
Mín.: 600
Múlt.: 600

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 283 W - 55 C + 175 C STGW60H65DFB-4 Tube
STMicroelectronics GH50H65DRB2-7AG
STMicroelectronics IGBTs Automotive trench gate field-stop 650 V, 50 A high-speed IGBT freewheeling diode
Hoja de datos

L9965P AEC-Q100 Reel
STMicroelectronics GWA75H65DRFB2AG
STMicroelectronics IGBTs Automotive-grade trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT
Hoja de datos

AEC-Q100 Tube
STMicroelectronics STG200G65FD8AG
STMicroelectronics IGBTs Automotive-grade trench gate field-stop 650V 200A high-efficiency M series IGBT
Hoja de datos

AEC-Q100
STMicroelectronics STGB20H65FB2
STMicroelectronics IGBTs Trench gate field-stop 650 V, 20 A high-speed HB2 series IGBT in a D2PAK package
Hoja de datos

- 20 V, 20 V Reel, Cut Tape, MouseReel
STMicroelectronics STGB25N36LZAG
STMicroelectronics IGBTs Automotive-grade 360 V internally clamped IGBT ESCIS 300 mJ
Hoja de datos

AEC-Q101 Reel
STMicroelectronics STGFW50HP65FB2
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT
Hoja de datos

Tube
STMicroelectronics STGH50H65B2-7AG
STMicroelectronics IGBTs Automotive-grade trench gate field-stop 650 V, 50 A high-speed HB2 series IGBT
Hoja de datos

AEC-Q100 Reel
STMicroelectronics STGP8H60DF2
STMicroelectronics IGBTs

STMicroelectronics STGWA30H65DFB2
STMicroelectronics IGBTs Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a TO-247 long l
Hoja de datos

- 20 V, 20 V Tube
STMicroelectronics STGB20H65DFB2
STMicroelectronics IGBTs Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a D2PAK package
Hoja de datos

- 20 V, 20 V Reel
STMicroelectronics STGF30H65DFB2
STMicroelectronics IGBTs Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a TO-220FP pack
Hoja de datos

- 20 V, 20 V Tube
STMicroelectronics STGP30H65DFB2
STMicroelectronics IGBTs Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a TO-220 packag
Hoja de datos

- 20 V, 20 V Tube

STMicroelectronics IGBT Automotive-grade 400 V internally clamped IGBT ESCIS 320 mJ
Hoja de datos
No en almacén Plazo producción 14 Semanas
Mín.: 2.000
Múlt.: 1.000
: 1.000

Si D2PAK-3 SMD/SMT Single 435 V 1.1 V - 12 V, 16 V 25 A 150 W - 55 C + 175 C STGB25N40LZAG AEC-Q101 Reel
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 600 V, 5 A high speed
Hoja de datos
No en almacén Plazo producción 15 Semanas
Mín.: 2.000
Múlt.: 1.000
: 1.000

Si D2PAK-3 SMD/SMT Single 600 V 1.5 V - 20 V, 20 V 10 A 88 W - 55 C + 175 C STGB5H60DF Reel

STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 6 A low loss
Hoja de datos

Si D2PAK-3 SMD/SMT Single 650 V 1.55 V - 20 V, 20 V 12 A 88 W - 55 C + 175 C STGB6M65DF2 Reel
STMicroelectronics IGBT N Ch 10A 600V
Hoja de datos
No en almacén Plazo producción 14 Semanas
Mín.: 2.500
Múlt.: 2.500
: 2.500

Si DPAK-3 (TO-252-3) SMD/SMT Single 600 V 1.9 V - 20 V, 20 V 20 A 60 W - 55 C + 150 C STGD10NC60H Reel
STMicroelectronics IGBTs Trench gate field-stop IGBT M series, 650 V 10 A low loss
Hoja de datos

Si TO-220FP-3 Through Hole Single 650 V 1.8 V - 20 V, 20 V 20 A 30 W - 55 C + 175 C STGF10M65DF2
STMicroelectronics IGBT Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
Hoja de datos
No en almacén Plazo producción 14 Semanas
Mín.: 600
Múlt.: 300

Si TO-3PF Through Hole Single 600 V 1.8 V - 20 V, 20 V 80 A 62.5 W - 55 C + 175 C STGFW40V60DF Tube
STMicroelectronics IGBTs Trench gate field-stop, 650 V, 20 A low-loss M series IGBT in a TO-247 long lead
Hoja de datos

Si TO-247-3 Through Hole Single 650 V 1.55 V - 20 V, 20 V 40 A 166 W - 55 C + 175 C HB2 Tube