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IXYH100N65C5

Name: IXYS IXYH100N65C5
Brand: IXYS
SKU: 747-IXYH100N65C5
Price: 11.32 EUR
Availability: InStock

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Mouser REF:

747-IXYH100N65C5

Fabr. N.º:

IXYH100N65C5

Fabr.:

IXYS

Descripción:

IGBT 650V, 100A, XPT Gen5 C5 IGBT in TO-247AD

Ciclo de vida:

Nuevo producto:

Novedad de este fabricante.

Hoja de datos:

IXYH100N65C5 Hoja de datos (PDF)

Modelo ECAD:

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Más información sobre IXYS IXYH100N65C5

En existencias: 74

Existencias:: 74

Puede enviarse inmediatamente

Se ha producido un error inesperado. Intente de nuevo más tarde.
Pedido:: 300

Fecha prevista: 14/04/2026
Plazo de producción de fábrica:: 28

Semanas Tiempo estimado para la producción en fábrica para cantidades superiores a las mostradas.

Introducir cantidad:

Mínimo: 1 Múltiples: 1

Precio unitario:

-,-- €

Precio total:

-,-- €

Tarifa estimada:

Precio (EUR)

Cant.	Precio unitario	Precio total
	11,32 €	11,32 €
	8,05 €	80,50 €
	5,74 €	688,80 €
	5,73 €	2.922,30 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Atributo del producto	Valor del atributo	Seleccionar atributo
Fabricante:	IXYS
Categoría de producto:	IGBT
RoHS:
Tecnología:	Si
Empaquetado / Estuche:	TO-247-3
Estilo de montaje:	Through Hole
Configuración:	Single
Voltaje colector-emisor VCEO máx.:	650 V
Voltaje de saturación colector-emisor:	1.68 V
Voltaje puerta-emisor máximo:	20 V
Corriente continua del colector a 25 C:	230 A
Pd (disipación de potencia):	750 W
Temperatura operativa mínima:	- 55 C
Temperatura operativa máxima:	+ 175 C
Serie:	Trench
Empaquetado:	Tube
Marca:	IXYS
Corriente continua del colector Ic Máx.:	230 A
País de ensamblaje:	Not Available
País de difusión:	Not Available
País de origen:	KR
Corriente de fuga puerta-emisor:	100 nA
Tipo de producto:	IGBT Transistors
Cantidad del paquete de fábrica:	30
Subcategoría:	IGBTs
Nombre comercial:	XPT

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Hoja de datos

IXYH100N65C5 Hoja de datos (PDF)

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

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Trench 650V to 1200V XPT™ GenX4™ IGBTs

IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs are developed using a proprietary XPT thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The devices exhibit exceptional ruggedness during switching and under short-circuit conditions.

IXYxN120A4 XPT™ GenX4™ IGBTs

IXYS IXYxN120A4 XPT™ GenX4™ IGBTs are the 4th generation Trench IGBTs that feature XPT thin-wafer technology. These ultra-low V_SAT IGBT transistors support switching frequencies up to 5kHz and are optimized for low conduction losses. The IXYxN120A IGBTs offer advantages such as high power density, a low gate drive requirement, and an operating temperature from -55°C to +175°C. These transistors come in TO-247 and TO-269HV packages, each featuring a voltage of 1200V and a current of 55A or 85A. The IXYxN120A IGBTs are used in applications such as power inverters, motor drives, PFC circuits, battery chargers, welding machines, lamp ballasts, and inrush current protector circuits.

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