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IXTP12N70X2M

Name: IXYS IXTP12N70X2M
Brand: IXYS
SKU: 747-IXTP12N70X2M
Price: 5.15 EUR
Availability: OutOfStock

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Mouser REF:

747-IXTP12N70X2M

Fabr. N.º:

IXTP12N70X2M

Fabr.:

IXYS

Descripción:

MOSFET TO220 700V 12A N-CH X2CLASS

Hoja de datos:

IXTP12N70X2M Hoja de datos

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Más información sobre IXYS IXTP12N70X2M

Disponibilidad

Existencias:: No en almacén

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Plazo de producción de fábrica:: 41 Semanas Tiempo estimado para la producción en fábrica.

Plazo de entrega largo indicado para este producto.

Introducir cantidad:

Mínimo: 1 Múltiples: 1

Precio unitario:

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Precio (EUR)

Cant.	Precio unitario	Precio total
	5,15 €	5,15 €
	3,60 €	36,00 €
	2,53 €	253,00 €
	2,48 €	1.240,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Atributo del producto	Valor del atributo	Seleccionar atributo
Fabricante:	IXYS
Categoría de producto:	MOSFET
RoHS:
Tecnología:	Si
Estilo de montaje:	Through Hole
Empaquetado / Estuche:	TO-220-3
Polaridad de transistor:	N-Channel
Número de canales:	1 Channel
Vds (Tensión separación drenador-fuente):	700 V
Id: corriente de drenaje continuo:	12 A
Rds encendido (drenaje de la fuente en resistencia):	300 mOhms
Vgs (tensión de compuerta-fuente):	- 30 V, 30 V
Vgs th (tensión umbral compuerta-fuente):	2.5 V
Temperatura operativa mínima:	- 55 C
Temperatura operativa máxima:	+ 150 C
Pd (disipación de potencia):	180 W
Modo canal:	Enhancement
Nombre comercial:	HiPerFET
Empaquetado:	Tube
Marca:	IXYS
Configuración:	Single
País de ensamblaje:	Not Available
País de difusión:	Not Available
País de origen:	KR
Tiempo de caída:	27 ns
Transconductancia delantera: mín.:	7 S
Tipo de producto:	MOSFETs
Tiempo de establecimiento:	30 ns
Cantidad del paquete de fábrica:	50
Subcategoría:	Transistors
Tipo de transistor:	1 N-Channel
Tiempo típico de retraso de apagado:	78 ns
Tiempo de retardo de conexión típico:	24 ns
Peso unitario:	2 g

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

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